tpcp8102 TOSHIBA Semiconductor CORPORATION, tpcp8102 Datasheet - Page 3

• Manufacturer Part Number: tpcp8102
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type U-mos ??
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristic
Characteristic
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
Symbol
V
I
DRP
DSF
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
Q
I
I
C
C
|Y
C
Q
GSS
DSS
V
t
t
Q
oss
on
off
gs1
t
t
iss
rss
gd
th
I
fs
r
f
g
DR
|
= -3.6 A, V
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
V
D
D
D
GS
DS
DS
GS
GS
GS
DS
DS
DD
GS
= -10 mA, V
= -10 mA, V
= -7.2 A
3
(Ta = 25°C)
-5 V
= ± 10 V, V
= -20 V, V
= -10 V, I
= -2.0 V, I
= -2.5 V, I
= -4.5 V, I
= -10 V, I
= -10 V, V
∼ − -16 V, V
0 V
Test Condition
GS
= 0 V
Test Condition
w
⎯
D
D
= 10 μs
GS
GS
GS
D
D
D
GS
GS
DS
= -200 μA
= -3.6 A
= -1.8 A
= -3.6 A
= -3.6 A
= 0 V
= 12 V
V
= 0 V
= 0 V, f = 1 MHz
= -5 V,
I
= 0 V
D
DD
= -3.6 A
∼ − -10 V
V
OUT
-0.45
Min
Min
-20
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-8
2560
Typ.
Typ.
13.5
330
380
142
5.4
29
20
24
14
42
33
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
TPCP8102
2006-11-17
-28.8
Max
Max
±10
-1.2
-10
1.2
80
30
18
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
A
V
V
V
S