tpcp8ba1 TOSHIBA Semiconductor CORPORATION, tpcp8ba1 Datasheet
tpcp8ba1
Manufacturer Part Number
tpcp8ba1
Description
Silicon P Channel Mos Type U-mos-ii / Silicon Epitaxial Schottky Barrier Diode
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCP8BA1.pdf
(4 pages)
○ DC-DC Converter
•
•
Maximum Ratings
Maximum Ratings
Maximum Ratings
Handling Precaution
Combined Pch MOSFET and Schottky Diode into one Package.
Low R
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
Operating temperature
Note 1: Mounted on FR4 board
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use
containers and other objects that are made of anti-static materials.
the board material, board area, board thickness and pad area. When using this device, please take heat
dissipation fully into account.
TENTATIVE
When handling individual devices (which are not yet mounting on a circuit board), be sure that the
The Channel-to-Ambient thermal resistance R
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm
DS (ON)
Silicon P Channel MOS Type (U-MOS-II) / Silicon Epitaxial Schottky Barrier Diode
Characteristics
Characteristics
Characteristics
and Low V
(Ta = 25°C) MOSFET
(Ta = 25°C) SCHOTTKY DIODE
(Ta = 25°C) MOSFET, DIODE COMMON
F
Pulse
DC
I
P
DP
D
Symbol
Symbol
Symbol
TPCP8BA1
V
(Note 1)
V
I
V
T
(Note 2)
T
T
FSM
GSS
V
I
I
(Note 3)
T
RM
opr
DS
stg
D
ch
O
R
j
4 (50 Hz)
Rating
th (ch-a)
2
125
−55~125
0.7
)
30
25
−40~85
Rating
Rating
−1.3
−2.6
−20
±12
150
1.0
1
and the drain power dissipation P
Unit
°C
V
V
A
A
Unit
Unit
°C
°C
°C
W
V
V
A
Weight: mg (typ)
JEDEC
JEITA
TOSHIBA TOSHIBA
1:Anode
2:N/C
3:Source
4:Gate
5,6:Drain
7,8:Cathode
D
vary according to
TPCP8BA1
2003-12-19
単位: mm
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tpcp8ba1 Summary of contents
Page 1
... FSM °C T 125 j Symbol Rating Unit −55~125 °C T stg °C T opr −40~85 (Note and the drain power dissipation P th (ch-a) 1 TPCP8BA1 単位: mm 1:Anode 2:N/C 3:Source 4:Gate 5,6:Drain 7,8:Cathode JEDEC JEITA TOSHIBA TOSHIBA Weight: mg (typ) vary according to D 2003-12-19 ...
Page 2
... 0~−2 off ( OUT (c) V out V DD requires higher voltage than V GS (on < V < (off TPCP8BA1 Min Typ −20 = +12 V −8 −0.5 (注 4) 1.3 2.7 = −4 V (注 4) 140 = −2.5 V ...
Page 3
... Characteristic Forward voltage Reverse current Total capacitance (Ta = 25°C) Symbol Test Condition = 10V MHz TPCP8BA1 Min Typ. Max Unit 0.36 0.41 V 0.40 0.45 V µA 100 2003-12-19 ...
Page 4
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulatio ns. 4 TPCP8BA1 030619EAA 2003-12-19 ...