tpcp8ba1 TOSHIBA Semiconductor CORPORATION, tpcp8ba1 Datasheet - Page 2

• Manufacturer Part Number: tpcp8ba1
• Description: Silicon P Channel Mos Type U-mos-ii / Silicon Epitaxial Schottky Barrier Diode
• Manufacturer: TOSHIBA Semiconductor CORPORATION

MOSFET
Switching Time Test Circuit
Precaution
Electrical Characteristics
(a) Test circuit
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note 4: Pulse measurement
for this product. For normal switching operation, V
requires lower voltage than V
V
(Relationship can be established as follows: V
Please take this into consideration for using the device.
V
th
GS
2.5 V
can be expressed as voltage between gate and source when low operating current value is I
recommended voltage of -2.5 V or higher to turn on this product.
0
V
R
Duty
IN: t
Common Source
Ta = 25°C
Characteristic
DD
G
10 µs
= 4.7 Ω
r
, t
= 10 V
< =
f
T u r n - o f f
1%
< 5 ns
Turn-on time
IN
t i m e
th
.
(Ta = 25°C)
V
V
V
R
OUT
DD
Symbol
(BR) DSS
(BR) DSX
DS (ON)
I
I
C
|Y
C
C
GSS
DSS
V
t
t
on
off
oss
rss
iss
th
fs
|
GS (off)
(b) V
(c) V
V
V
V
I
I
V
V
V
I
I
I
V
V
V
D
D
D
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
= −1 mA, V
= −1 mA, V
= −0.65 A, V
= −0.65 A, V
= −0.65 A, V
GS (on)
2
= −20 V, V
= −3 V, I
= −3 V, I
= −10 V, V
= −10 V, V
= −10 V, V
= ±12 V, V
= −10 V, I
= 0~−2.5 V, R
IN
out
< V
Test Condition
requires higher voltage than V
th
D
D
GS
GS
< V
D
GS
GS
GS
GS
= −0.1 mA
= −0.65 A
GS
GS
GS
DS
= −0.65 A
= 0
= +12 V
GS (on)
= −4 V
= −2.5 V
= −2.0 V
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
G
= 4.7 Ω
V
DS (ON)
)
2.5 V
V
0 V
DD
(注 4)
(注 4)
(注 4)
(注 4)
−0.5
Min
−20
1.3

−8









t
10%
on
t
r
th
Typ.
140
200
260
370
116
2.7
73
33
47





90%
10%
and V
TPCP8BA1
2003-12-19
D
GS (off)
90%
−1.1
t
Max
180
260
460
off
±1
−1








= -100 µA
t
f
Unit
mΩ
µA
µA
pF
pF
pF
ns
V
V
S