tpc8032-h TOSHIBA Semiconductor CORPORATION, tpc8032-h Datasheet
tpc8032-h
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tpc8032-h Summary of contents
Page 1
... DGR ± GSS 1 1 146 0. 150 °C ch −55 to 150 T °C stg 1 TPC8032-H Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 2007-12-25 ...
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... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPC8032-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2007-12-25 ...
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... gs1 ∼ − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPC8032-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.5 2.5 ⎯ 6.6 8.6 ⎯ 5.0 6.5 ⎯ ...
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... Drain current I ( (V) Drain-source voltage V 0.2 0.15 0.1 0. Gate-source voltage 100 0.1 4 TPC8032-H I – Common source 3 25°C Pulse test 3.4 3.3 3 3.0V 0.4 1.2 0.8 1 – Common source Ta = 25℃ Pulse test 7.5 3 ...
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... Pulse test 0 100 −80 −40 (V) Ambient temperature Common source 25°C 40 Pulse test 160 0 C) ° 5 TPC8032-H I – 4 − −0.4 −0.6 −0.8 −1 ( – 120 160 C) ° ...
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... I D max (Pulse =1ms * t =10ms * Single – pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. V DSS max 0.1 10 0.1 1 Drain-source voltage – 0.01 0 Pulse width t (s) w 100 (V) 6 TPC8032-H (2) (1) Single - pulse 100 1000 2007-12-25 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8032-H 20070701-EN 2007-12-25 ...