tpc8032-h TOSHIBA Semiconductor CORPORATION, tpc8032-h Datasheet - Page 6

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tpc8032-h

Manufacturer Part Number
tpc8032-h
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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1000
100 I D max (Pulse) *
0.1
10
1
0.1
* Single – pulse Ta = 25℃
Curves must be derated linearly
with increase in temperature.
Drain-source voltage V
1000
0.01
100
0.1
0.0001
10
Safe operating area
1
t =10ms *
1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
0.001
t =1ms *
V DSS max
10
DS
(V)
0.01
100
Pulse width t
0.1
r
th
– t
6
w
w
1
(s)
10
Single - pulse
100
(2)
(1)
1000
TPC8032-H
2007-12-25

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