suu50n03-10p Vishay, suu50n03-10p Datasheet
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suu50n03-10p
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suu50n03-10p Summary of contents
Page 1
... 25_C 25_C stg Symbol t ≤ 10 sec R R thJA Steady State Steady State R thJC SUU50N03-10P Vishay Siliconix D S Limit Unit 30 100 8.3 --55 to 175 Typical Maximum Unit _C/W 1.75 2.1 www.vishay.com V V ...
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... SUU50N03-10P Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance ...
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... 0.030 T = --55_C C 0.025 25_C 0.020 125_C 0.015 0.010 0.005 0.000 SUU50N03-10P Vishay Siliconix Transfer Characteristics T = 125_C C 25_C --55_C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUU50N03-10P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0.4 0.0 --50 -- Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Ambient Temperature 100 T -- Case Temperature (_C) A Normalized Thermal Transient Impedance, Junction-to-Ambient ...