suu50n03-10p Vishay, suu50n03-10p Datasheet - Page 2

• Manufacturer Part Number: suu50n03-10p
• Description: N-channel 30-v D-s , 175_c, Mosfet Pwm Optimized
• Manufacturer: Vishay

SUU50N03-10P
Vishay Siliconix
Notes:
a.
b.
c.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
Parameter
g
a
c
c
c
c
c
a
a
a
a
Symbol
V
V
r
r
(BR)DSS
I
DS(
DS(on)
t
t
I
I
C
GS(th)
C
V
J
D(on)
C
Q
Q
d(on)
d(off)
GSS
I
DSS
DSS
Q
g
SM
I
t
oss
t
t
SD
iss
rss
S
rr
fs
gs
gd
r
f
g
=25_C UNLESS OTHERWISE NOTED)
)
C
= 25_C)
V
V
I
V
V
D
V
V
DS
DS
GS
GS
DS
DS
≃ 20 A, V
GS
= 30 V, V
= 30 V, V
I
= 10 V, I
= 10 V, I
V
V
= 15 V, V
F
= 0 V, V
V
V
V
V
V
V
DS
V
V
DS
I
= 20 A, di/dt = 100 A/ms
Test Condition
DS
DS
DD
DD
F
GS
GS
GS
DS
= 100 A, V
b
= V
= 0 V, V
= 30 V, V
= 5 V, V
= 15 V, R
= 4.5 V, I
= 0 V, I
= 10 V, I
= 15 V, I
,
GEN
15 V, R
GS
D
D
DS
GS
GS
GS
GS
= 15 A, T
= 15 A, T
, I
= 25 V, f = 1 MHz
= 10 V, R
= 0 V, T
= 0 V, T
= 10 V, I
GS
DS
D
GS
D
D
= 250 mA
D
GS
L
L
GS
= 250 mA
= 20 V
= 15 A
= 15 A
= 0.3 Ω
= 15 A
= 10 V
= 0 V
0.3 Ω
= 0 V
,
J
J
J
J
D
D
g
g
= 125_C
= 175_C
= 125_C
= 175_C
= 2.5 Ω
= 20 A
Min
30
50
20
1
0.0075
S-01706—Rev. A, 14-Aug-00
0.011
Typ
2710
500
250
1.2
55
10
16
90
33
20
55
Document Number: 71296
2
9
Max
100
0.010
0.016
0.019
0.014
6000
150
100
135
100
100
1.5
50
30
60
40
20
1
Unit
nA
mΑ
m
pF
nC
ns
ns
ns
Ω
Ω
V
V
A
S
A
A
V