suu50n03-10p Vishay, suu50n03-10p Datasheet - Page 4

• Manufacturer Part Number: suu50n03-10p
• Description: N-channel 30-v D-s , 175_c, Mosfet Pwm Optimized
• Manufacturer: Vishay

SUU50N03-10P
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
THERMAL RATINGS
0.01
2.0
1.6
1.2
0.8
0.4
0.0
0.1
25
20
15
10
5
0
2
1
--50
10
0
- -4
On-Resistance vs. Junction Temperature
V
I
--25
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
D
GS
Maximum Avalanche Drain Current
25
= 50 A
Single Pulse
= 10 V
T
0
vs. Ambient Temperature
J
T
50
A
-- Junction Temperature (_C)
-- Case Temperature (_C)
25
10
- -3
75
50
75
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
125
10
125
- -2
150
150
Square Wave Pulse Duration (sec)
175
175
10
- -1
1000
0.01
100
1
100
0.1
10
10
1
1
0.1
0
by r
Limited
Source-Drain Diode Forward Voltage
T
DS(on)
J
V
= 150_C
0.3
V
DS
SD
Single Pulse
Safe Operating Area
T
-- Drain-to-Source Voltage (V)
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
-- Source-to-Drain Voltage (V)
A
Notes:
P
1
= 25_C
DM
JM
- - T
0.6
A
t
1
= P
t
2
DM
Z
S-01706—Rev. A, 14-Aug-00
thJA
0.9
thJA
Document Number: 71296
100
10
t
t
(t)
1
2
T
= 40_C/W
J
= 25_C
1.2
10 ms
100 ms
1 ms
10 ms
100 ms
1 s
10 s
100 s
dc
600
100
1.5