tpca8a01-h TOSHIBA Semiconductor CORPORATION, tpca8a01-h Datasheet - Page 2

• Manufacturer Part Number: tpca8a01-h
• Description: ?oshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type Ultra-high-speed U-mos ?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking
Thermal resistance, channel to case
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: The channel temperature should not exceed 150°C during use
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by max. channel temperature
Note 5:
TPCA
8A01-H
(Note 5)
* Weekly code: (Three digits)
DD
= 24 V， T
※
Characteristic
(a)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Type
ch
Lot No.
= 25°C (initial)， L = 0.1 mH， R
25.4 × 25.4 × 0.8
(Tc=25℃)
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
R
Symbol
th (ch-c)
th (ch-a)
th (ch-a)
2
2.78
44.6
78.1
Max
G
= 25 Ω， I
(b) Device mounted on a glass-epoxy board (b)
°C/W
°C/W
°C/W
Unit
(b)
AR
= 36 A
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCA8A01-H
2007-04-10