tpca8a01-h TOSHIBA Semiconductor CORPORATION, tpca8a01-h Datasheet - Page 7

• Manufacturer Part Number: tpca8a01-h
• Description: ?oshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type Ultra-high-speed U-mos ?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

160
120
100
0.1
80
40
10
0
1
0
0
V GS = 0 V
Pulse test
Drain-source voltage V
Drain-source voltage V
0.2
10
I
0.4
DR
Tch – V
125
– V
20
DSF
DS
Ta = 25°C
0.6
DSF
DS
30
75
0.8
V GS = 0 V
Pulse test
(V)
(V)
40
1
7
100000
10000
1000
100
10
0
V GS = 0 V
Pulse test
Channel temperature Tch (°C)
40
I
DSS
V
DS
= 30 V
– Tch
80
V
DS
= 20 V
120
V
TPCA8A01-H
V
DS
DS
= 10 V
(typ.)
= 5 V
2007-04-10
160