tpca8a04-h TOSHIBA Semiconductor CORPORATION, tpca8a04-h Datasheet - Page 4

• Manufacturer Part Number: tpca8a04-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.1
50
40
30
20
10
50
40
20
10
30
10
0
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
10
8
6
Drain-source voltage V
Gate-source voltage V
4.5
0.2
5
1
Ta = −55°C
Drain current I
1
0.4
100
2
⎪Y
I
I
D
D
100
fs
– V
– V
⎪ − I
DS
GS
3
Ta = −55°C
0.6
D
25
3
25
D
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.5 V
0.8
4
(V)
(V)
2.7
2.9
2.8
100
1
5
4
100
0.3
0.2
0.1
80
60
40
20
10
0
0
1
0.1
10
0
0
8
Common source
Ta = 25°C
Pulse test
6
4.5
5
Drain-source voltage V
Gate-source voltage V
2
1
Drain current I
1
R
V
DS (ON)
2
4
I
DS
V GS = 10 V
D
– V
4.5 V
– V
DS
GS
− I
6
3
D
3.1
D
10
I D = 44 A
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
22
11
TPCA8A04-H
V GS = 2.5 V
8
4
(V)
(V)
2008-08-21
3.0
2.9
2.8
2.7
100
10
5