tpca8a04-h TOSHIBA Semiconductor CORPORATION, tpca8a04-h Datasheet - Page 7
tpca8a04-h
Manufacturer Part Number
tpca8a04-h
Description
Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCA8A04-H.pdf
(8 pages)
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100
160
140
120
100
10
80
60
40
20
1
0
0
0
V GS = 0 V
Pulse test
Drain-source voltage V
Drain-source voltage V
0.2
10
I
0.4
DR
Tch – V
– V
20
125
DSF
DS
0.6
Ta = 25°C
DSF
DS
30
75
0.8
V GS = 0 V
Pulse test
(V)
(V)
40
1
7
100000
10000
1000
100
10
0
V GS = 0 V
Pulse test
Channel temperature Tch (°C)
40
I
DSS
– Tch (typ.)
80
V DS = 30 V
20
120
TPCA8A04-H
10
2008-08-21
5
160
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