buk95r2-40b NXP Semiconductors, buk95r2-40b Datasheet - Page 7
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buk95r2-40b
Manufacturer Part Number
buk95r2-40b
Description
Buk95/96/9e3r2-40b Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1.BUK95R2-40B.pdf
(16 pages)
Philips Semiconductors
9397 750 12049
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
T
(m )
I D
350
280
210
140
j
j
(A)
= 25 C; t
= 25 C
70
8
6
4
2
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
10
5
2.8
p
4
= 300 s
70
2
3
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
3.2
140
4
3.4
3.6
210
6
Label is V GS (V)
Label is V GS (V)
3.8
280
8
V DS (V)
4
I D (A)
03nh57
03nh56
5
10
Rev. 04 — 14 November 2003
350
10
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R DSon
T
a
(m )
j
a
1.5
0.5
= 25 C; I
=
5
4
3
2
2
1
0
of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
BUK95/96/9E3R2-40B
3
DSon 25 C
R
DSon
D
= 25 A
0
7
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
60
11
120
V GS (V)
T j ( C)
03aa27
03nh55
180
15
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