buk95r2-40b NXP Semiconductors, buk95r2-40b Datasheet - Page 9
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buk95r2-40b
Manufacturer Part Number
buk95r2-40b
Description
Buk95/96/9e3r2-40b Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1.BUK95R2-40B.pdf
(16 pages)
Philips Semiconductors
9397 750 12049
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
V
100
DS
GS
I D
(A)
75
50
25
0
function of gate-source voltage; typical values.
= 25 V
= 0 V
0
1
T j = 175 C
2
100
I S
(A)
75
50
25
0
V GS (V)
0.0
T j = 25 C
03nh54
Rev. 04 — 14 November 2003
0.2
3
T j = 175 C
T j = 25 C
0.4
Fig 14. Gate-source voltage as a function of gate
0.6
T
V GS
j
(V)
= 25 C; I
5
4
3
2
1
0
charge; typical values.
0.8
BUK95/96/9E3R2-40B
0
V SD (V)
03nh51
D
= 25 A
1.0
25
V DD = 14 V
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
50
75
V DD = 32 V
Q G (nC)
03nh52
100
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