buk7523 NXP Semiconductors, buk7523 Datasheet - Page 6

• Manufacturer Part Number: buk7523
• Description: Buk7523-75a; Buk7623-75a Trenchmos Tm Standard Level Fet
• Manufacturer: NXP Semiconductors

Table 5:
T
Philips Semiconductors
9397 750 07583
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
I D
(A)
(mOhm) V
R DSon
Characteristics
200
180
160
140
120
100
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
80
60
40
20
0
60
50
40
30
20
10
0
0
p
= 300 s
GS = 5(V)
2
50
6
…continued
4
100
7
6
8
VGS = 20(V)
150
9
8
Conditions
I
Figure 15
I
V
V DS (V)
10
S
S
I D (A)
GS
03nb06
= 25 A; V
= 46 A; dI
03nb07
= 10 V; V
10
200
Rev. 01 — 09 October 2000
4.5
10
9
8
7
6
5
GS
S
BUK7523-75A; BUK7623-75A
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
(mOhm)
R DSon
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
--------------------------- -
R
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
DSon 25 C
R
-60
28
26
24
22
20
18
16
14
12
10
DSon
D
5
Min
= 25 A
-20
TrenchMOS™ standard level FET
20
10
Typ
0.85
53
144
60
© Philips Electronics N.V. 2000. All rights reserved.
100
15
Max
1.2
140
T j ( o C)
V GS (V)
03nb25
180
03nb05
20
Unit
V
ns
nC
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