buk7514 NXP Semiconductors, buk7514 Datasheet - Page 5

• Manufacturer Part Number: buk7514
• Description: Buk7514-55a; Buk7614-55a Trenchmos Tm Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
July 2000
TrenchMOS
Standard level FET
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
V
4
3
3
2
2
1
1
0
Fig.13. Typical capacitances, C
0.01
5
4
3
2
1
0
-100
I
Capacitance / nF
C = f(V
GS(TO)
D
VGS(TO) / V
0
= f(V
Fig.12. Sub-threshold drain current.
max.
min.
typ.
Fig.11. Gate threshold voltage.
= f(T
-50
GS)
DS
); conditions: V
; conditions: T
0.1
1
j
); conditions: I
0
transistor
2%
Tj / C
2
VDS/V
1
50
j
GS
= 25 ˚C; V
D
typ
= 1 mA; V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
100
3
10
iss
, C
98%
150
BUK759-60
DS
DS
oss
4
= V
, C
= V
100
200
GS
Ciss
Coss
Crss
rss
GS
.
5
5
Fig.14. Typical turn-on gate-charge characteristics.
VGS / V
V
I
Fig.16. Normalised avalanche energy rating.
F
GS
120
110
100
90
80
70
60
50
40
30
20
10
= f(V
0
= f(Q
10
Fig.15. Typical reverse diode current.
20
9
8
7
6
5
4
3
2
1
0
W
WDSS%
0
SDS
DSS
G
); conditions: I
40
); conditions: V
% = f(T
10
60
[PICTURE]
mb
80
); conditions: I
20
Tmb / C
VDS = 14V
D
100
QG / nC
GS
= 50 A; parameter V
= 0 V; parameter T
120
30
Product specification
BUK7514-55A
BUK7614-55A
140
D
= 75 A
160
40
VDS = 44V
Rev 1.000
180
DS
j
50