buk7508 NXP Semiconductors, buk7508 Datasheet - Page 6

• Manufacturer Part Number: buk7508
• Description: Buk7508-55a; Buk7608-55a Trenchmos Tm Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 5:
T
9397 750 09091
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
R DSon
= 25 C; t
= 25 C
(m )
function of drain-source voltage; typical values.
of drain current; typical values.
I D
(A)
25
20
15
10
Characteristics
160
140
120
100
5
80
60
40
20
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
0
0
18 V
p
= 300 s
20
V GS = 5.5 (V)
2
40
10 V
8.0 V
…continued
4
60
6
80
6
10
V GS = 4.5 V
7.5
100
8
V DS (V)
5.5 V
5.0 V
6.5 V
6.0 V
I D (A)
7.0 V
Conditions
I
Figure 15
I
V
03nh45
03nh46
S
S
6.5
GS
= 25 A; V
= 75 A; dI
7
9
120
10
= 10 V; V
Rev. 02 — 17 January 2002
BUK7508-55A; BUK7608-55A
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
a
j
R DSon
= 25 C; I
=
(m )
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
1.5
0.5
14
12
10
2
1
0
---------------------------- -
R
8
6
-60
DSon 25 C
5
R
DSon
D
Min
-
-
-
= 25 A
0
TrenchMOS™ standard level FET
10
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
0.85
65
170
60
15
120
V GS (V)
T j (ºC)
Max
1.2
-
-
03nh44
03ne89
180
20
Unit
V
ns
nC
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