tpcc8a01-h TOSHIBA Semiconductor CORPORATION, tpcc8a01-h Datasheet

tpcc8a01-h

Manufacturer Part Number

tpcc8a01-h

Description

Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TPCC8A01-H.pdf (8 pages)

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High Efficiency DC-DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Built-in a Schottky barrier diode

Low forward voltage: V

High-speed switching

Small gate charge: Q

Low drain-source ON-resistance:

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25℃)

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristic

(Tc = 25℃) (Note 4)

TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

Pulsed (Note 1)

DSS

= 20 kΩ)

DS (ON)

DSF

= 4.1 nC (typ.)

= 1.3 to 2.3 V (V

(Note 2a)

(Note 2b)

(t = 10 s)

(Note 1)

= 100 μA (max) (V

(Note 3)

= −0.6 V (max)

= 9.0 mΩ (typ.) (V

Silicon N-Channel MOS Type (U-MOS V-H)

TPCC8A01-H

(Ta = 25°C)

| = 52 S (typ.)

Symbol

DGR

GSS

DSS

stg

= 10 V, I

= 30 V)

−55 to 150

= 4.5 V)

Rating

1.84

±20

115

150

1.9

0.7

= 1 mA)

Unit

°C

Weight: 0.02 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

1,2,3:SOURCE 4:GATE

5,6,7,8:DRAIN

TPCC8A01-H

2-3X1A

2010-01-19

⎯

Unit: mm

Related parts for tpcc8a01-h

tpcc8a01-h Summary of contents

Page 1

... 1 0 115 1. 150 °C ch −55 to 150 T °C stg 1 TPCC8A01-H Unit: mm 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN ⎯ JEDEC ⎯ JEITA TOSHIBA 2-3X1A Weight: 0.02 g (typ.) Circuit Configuration 2010-01-19 ...

... Year of manufacture (The last digit of the year) Symbol Max R 4.2 °C/W th (ch-c) (Tc = 25℃ °C/W th (ch-a) (Note 2a) R 180 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCC8A01-H Unit FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2010-01-19 ...

Page 3

... (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF = TPCC8A01-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 100 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.3 2.3 ⎯ 9.0 12.6 ⎯ 7.1 9.9 ⎯ ...

Page 4

... Drain-source voltage V 0.6 0.4 0 (V) Gate-source voltage V 100 Common source Ta = 25°C Pulse test 10 1 100 0.1 4 TPCC8A01-H I – Common source 4 25°C 3.5 Pulse test 3.3 3 2.6 V 0.4 0.8 1.2 1 – Common source Ta = 25°C ...

Page 5

... C oss 1.0 0.5 C rss Common source Pulse test 0 100 −80 −40 Ambient temperature Ta (°C) ( TPCC8A01-H − 4 Common source Ta = 25°C Pulse test −0.4 −0.6 −0.8 −1.0 (V) DS − ...

Page 6

... Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain-source voltage – 0.01 0 Pulse width t ( 160 0 100 (V) 6 TPCC8A01-H (2) (1) (3) Single - pulse 100 1000 P – 120 160 Case temperature Tc (°C) 2010-01-19 ...

Page 7

... Pulse test 140 120 100 Drain-source voltage V (V) DS 100000 Pulse test 10000 1000 75 100 10 −1 0 Channel temperature Tch (° TPCC8A01-H I – Tch (typ.) DSS 120 160 2010-01-19 ...

Page 8

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 8 TPCC8A01-H 2010-01-19 ...

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