tpcc8a01-h TOSHIBA Semiconductor CORPORATION, tpcc8a01-h Datasheet - Page 4

• Manufacturer Part Number: tpcc8a01-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.1
20
12
40
10
16
30
20
10
8
4
0
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
10
8
Drain-source voltage V
Gate-source voltage V
6
0.2
1
5
4.5
4
Ta = −55°C
Drain current I
1
0.4
2
⎪Y
100
3.3
I
I
D
D
100
fs
– V
– V
⎪ − I
DS
GS
0.6
D
3
25
D
3.2
Ta = −55°C
3.1
10
25
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.6 V
0.8
4
(V)
(V)
2.8
2.9
3
100
5
1
4
100
0.6
0.4
0.2
50
40
30
20
10
10
0
0
1
0.1
0
0
Common source
Ta = 25°C
Pulse test
10
Drain-source voltage V
Gate-source voltage V
8
0.4
2
6
5.3
Drain current I
5
4
4.5
1
R
0.8
V
DS (ON)
4
I
DS
D
10.5
V GS = 10 V
– V
4.5 V
– V
DS
GS
− I
1.2
6
D
D
3.5
10
GS
DS
(A)
I D = 21 A
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
TPCC8A01-H
V GS = 2.6 V
1.6
8
(V)
(V)
2010-01-19
3.3
3.2
2.8
3
100
10
2