tk07h90a TOSHIBA Semiconductor CORPORATION, tk07h90a Datasheet
tk07h90a
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tk07h90a Summary of contents
Page 1
... AR T 150 ° −55~150 °C stg Symbol Max Unit R 0.833 ° (ch− ° (ch− Ω TK07H90A 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC ― JEITA ― TOSHIBA 2-16K1A Weight: 3.8 g (typ 2006-11-13 Unit ...
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... Test Condition I — — DRP DSF 100 A / μ TK07H90A Min Typ. Max — — ±10 ±30 — — — — 100 900 — — 2.0 — 4.0 — 1.6 2.0 3.5 5.0 — — 1650 — ...
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... Drain−source voltage Gate−source voltage V 10 Common source Tc = 25°C Pulse test 1 100 0.1 10 0.1 3 TK07H90A I – Common source 25° Pulse test 5.75 5.5 5. – Common source Tc = 25° ...
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... C rss 1 0 −80 −40 100 100 (V) 500 V DS 400 300 V DD =100 V 200 100 0 0 200 Total gate charge Q 4 TK07H90A − −0.4 −0.8 −1.2 −1.6 (V) DS − Common source ...
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... Channel temperature (initial 1000 −15 V (V) Test circuit = 25 Ω = 18 TK07H90A Duty = t (ch-c) = 0.833°C – 100 125 150 (° VDSS I AR ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK07H90A 20070701-EN 2006-11-13 ...