tk07h90a TOSHIBA Semiconductor CORPORATION, tk07h90a Datasheet - Page 5

• Manufacturer Part Number: tk07h90a
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.01
100
0.1
10
1
1
I D max (Continuous)
I D max (Pulse) *
Curves
linearly
temperature.
* Single nonrepetitive pulse
Tc = 25°C
Drain−source voltage V
must
with
Safe operating area
0.01
increase
0.1
be
10
10
10μ
1
DC operation
0.2
0.1
0.05
0.02
Duty=0.5
Tc = 25°C
derated
in
0.01
100μ
1 ms *
100
DS
V DSS max
(V)
100 μs *
Single pulse
1000
1ｍ
Pulse width t
r
th
5
10ｍ
– t
w
R
V
w
1000
G
DD
800
600
400
200
= 25 Ω
0
25
= 90 V, L = 18.4 mH
(s)
−15 V
Channel temperature (initial) T
100ｍ
15 V
Test circuit
50
P DM
Duty = t/T
R th (ch-c) = 0.833°C/W
75
t
E
1
AS
T
– T
Ε AS
ch
100
V
DD
=
B
Wave form
1
2
10
VDSS
I
⋅
AR
L
ch
125
⋅
2 I
TK07H90A
⋅
(°C)
⎛
⎜
⎜
⎝
2006-11-13
B VDSS
V
DS
150
B VDSS
−
V DD
⎞
⎟
⎟
⎠