t1g6003028-sp TriQuint Semiconductor, t1g6003028-sp Datasheet - Page 4

• Manufacturer Part Number: t1g6003028-sp
• Description: 25w, 28v, 20mhz-6ghz, Gan Rf Power Transistor
• Manufacturer: TriQuint Semiconductor

T1G6003028-SP
25W, 28V, 20MHz-6GHz, GaN RF Power Transistor
Recommended operating conditions apply unless otherwise specified: T
RF Characteristics
Preliminary Data Sheet: Rev. G 6/24/2010
Copyright © 2010 TriQuint Semiconductor, Inc.
Electrical Specifications (continued)
Characteristics
Functional Tests, Narrow Band EVB RF Performance (3.5 GHz), CW
Linear Gain
(V
Output Power at 3 dB Gain Compression
(V
Drain Efficiency at 3 dB Gain Compression
(V
Power-Added Efficiency at 3 dB Gain Compression
(V
Gain at 3 dB Compression
(V
Impedance Mismatch Ruggedness
(V
DS
DS
DS
DS
DS
DS
=28 V, G
=28 V, G = G
=28 V, P
=28 V, P
=28 V, P
=28 V, P
out
out
out
LIN
in
for P
= P
= P
= P
= G
3dB
3dB
3dB
3dB
3dB
out
, I
, I
, I
, I
DQ
+ 3dB, I
= P
DQ
DQ
DQ
=100 mA), CW
=100 mA), CW
=100 mA), CW
=100 mA), CW
3dB
, I
DQ
DQ
=100 mA, VSWR=TBD, all angles)
=100 mA), CW
– 4 –
Symbol
PAE
DE
G
G
P
3dB
3dB
Connecting the digital World to the Global Network®
LIN
3dB
3dB
A
=25 ⁰C
Disclaimer: Subject to change without notice
Min
13.5
28.0
53.0
48.0
10.5
in output power
No degradation
14.0
33.0
56.0
51.5
11.0
Typ
Max
Unit
dB
dB
W
%
%