as4c256k16fo Alliance Memory, Inc, as4c256k16fo Datasheet - Page 5

• Manufacturer Part Number: as4c256k16fo
• Description: 5v 256k X 16 Cmos Dram Fast Page Mode
• Manufacturer: Alliance Memory, Inc

Write cycle
Read-modify-write cycle
Fast page mode cycle
4/11/01; V.0.9.1
Standard
Standard
Standard
Symbol
Symbol
t
Symbol
t
RSH(W)
CAS(W)
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WCH
t
AWR
WCR
CWL
t
t
CAH
WCS
RWL
DHR
CWD
t
RWC
RWD
AWD
CRW
RASP
ASC
t
t
PCM
WP
DH
CAP
DS
PC
CP
Column address setup time
Column address hold time
Column address hold time to RAS
Write command setup time
Write command hold time
Write command hold time to RAS
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
Data-in hold time
Data-in hold time to RAS
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
CAS to RAS hold time (write)
CAS pulse width (write)
Read or write cycle time
Access time from CAS precharge
CAS precharge time
Fast page mode RMW cycle
Page mode CAS pulse width (RMW)
RAS pulse width
Parameter
Parameter
Parameter
Alliance Semiconductor
Min
Min
100
19
19
19
21
34
17
15
0
5
0
5
5
7
5
0
5
7
Min
–25
56
44
25
–25
8
3
–
–25
Max
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
75K
14
–
–
–
–
(V
(V
(V
Min
100
Min
50
26
32
10
15
26
26
10
10
26
CC
CC
0
5
0
5
5
0
5
CC
Min
12
56
44
30
–30
–30
–
3
®
= 5V ± 10%, GND = 0V, T
= 5V ± 10%, GND = 0V, T
= 5V ± 10%, GND = 0V, T
–30
Max
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
75K
19
–
–
–
–
Min
105
Min
54
28
35
10
15
28
28
11
11
28
0
5
0
5
5
0
5
Min
14
58
46
35
–
4
–35
–35
–35
Max
Max
–
–
–
–
–
–
Max
–
–
–
–
–
–
–
–
–
–
–
–
75K
21
–
–
–
–
Min
120
Min
60
30
40
12
15
30
30
12
12
30
Min
0
9
0
9
9
0
9
25
60
50
50
–
5
–50
–50
–50
Max
Max
a
a
a
Max
75K
AS4C256K16FO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
23
= 0 C to +70 C)
= 0 C to +70 C)
= 0 C to +70 C)
–
–
–
–
Unit
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
P. 5 of 25
Notes
Notes
Notes
11
11
11
14
13
11
11
12
12