pbsm5240pf NXP Semiconductors, pbsm5240pf Datasheet

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pbsm5240pf

Manufacturer Part Number
pbsm5240pf
Description
Pbsm5240pf 40 V, 2 A Pnp Low V_cesat Biss Transistor With N-channel Trench Mosfet
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Combination of PNP low V
N-channel Trench MOSFET. The device is housed in a small and ultra thin SOT1118
Surface-Mounted Device (SMD) plastic package.
Table 1.
Symbol
PNP low V
V
I
I
R
N-channel Trench MOSFET
V
V
C
CM
CEO
DS
GS
CEsat
PBSM5240PF
40 V, 2 A PNP low V
Trench MOSFET
Rev. 1 — 25 August 2010
Very low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Loadswitch
Power management
Power switches (e.g. motors, fans)
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
drain-source voltage
gate-source voltage
(BISS) transistor
CEsat
CEsat
Breakthrough In Small Signal (BISS) transistor and
FE
) at high I
Conditions
open base
single pulse;
t
I
I
T
T
C
p
C
B
amb
amb
(BISS) transistor with N-channel
≤ 1 ms
= −50 mA
= −500 mA;
and I
= 25 °C
= 25 °C
CM
C
Battery-driven devices
Charging circuits
CEsat
[1]
[1]
[2]
Min
-
-
-
-
-
-
Preliminary data sheet
Typ
-
-
-
240
-
-
Max
−40
−2
−3
340
30
±8
Unit
V
A
A
V
V

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pbsm5240pf Summary of contents

Page 1

... PBSM5240PF PNP low V Trench MOSFET Rev. 1 — 25 August 2010 1. Product profile 1.1 General description Combination of PNP low V N-channel Trench MOSFET. The device is housed in a small and ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Very low collector-emitter saturation voltage V ...

Page 2

... Package Name Description HUSON6 Plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 × 2 × 0.65 mm Marking codes All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 PBSM5240PF PNP BISS/Trench MOSFET module Min Typ [ [4] - ...

Page 3

... T amb source current T amb junction temperature ambient temperature storage temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 PBSM5240PF PNP BISS/Trench MOSFET module Min - - - [1] - [1] - [1] - [1] - ≤ 25 °C ...

Page 4

... 100 MHz = − collector capacitance MHz ≤ 300 μs; δ ≤ 0.02. p All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 PBSM5240PF PNP BISS/Trench MOSFET module Conditions Min Typ [1] in free air - - [2] in free air ...

Page 5

... R G fall time source-drain voltage I S ≤ 300 μs; δ ≤ 0.01. p All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 PBSM5240PF PNP BISS/Trench MOSFET module Min = 10 μ ° −55 °C ...

Page 6

... NXP Semiconductors 8. Package outline Fig 1. 9. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSM5240PF SOT1118 [1] For further information and the availability of packing methods, see PBSM5240PF Preliminary data sheet 2.1 1.9 1.1 0.9 0.77 0.57 3 (2×) 2 ...

Page 7

... Reflow soldering is the only recommended soldering method. Reflow soldering footprint SOT1118 All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 PBSM5240PF PNP BISS/Trench MOSFET module 0.3 0.4 (6×) (6×) 1.05 1.15 (2×) (2×) Dimensions in mm © NXP B.V. 2010. All rights reserved. ...

Page 8

... NXP Semiconductors 11. Revision history Table 10. Revision history Document ID Release date PBSM5240PF v.1 20100825 PBSM5240PF Preliminary data sheet PNP BISS/Trench MOSFET module Data sheet status Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 PBSM5240PF ...

Page 9

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 PBSM5240PF PNP BISS/Trench MOSFET module © NXP B.V. 2010. All rights reserved ...

Page 10

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 PBSM5240PF PNP BISS/Trench MOSFET module © NXP B.V. 2010. All rights reserved ...

Page 11

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 25 August 2010 Document identifier: PBSM5240PF ...

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