pbsm5240pf NXP Semiconductors, pbsm5240pf Datasheet - Page 3

• Manufacturer Part Number: pbsm5240pf
• Description: Pbsm5240pf 40 V, 2 A Pnp Low V_cesat Biss Transistor With N-channel Trench Mosfet
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
PBSM5240PF
Preliminary data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
PNP low V
V
V
V
I
I
I
I
P
N-channel Trench MOSFET
V
V
V
I
I
P
Source-drain diode
I
Per device
T
T
T
C
CM
B
BM
D
DM
S
j
amb
stg
CBO
CEO
EBO
tot
DS
DG
GS
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
CEsat
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
source current
junction temperature
ambient temperature
storage temperature
(BISS) transistor
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
open emitter
open base
open collector
T
T
V
T
Conditions
single pulse;
t
T
T
R
single pulse;
t
T
T
p
p
amb
amb
amb
amb
amb
amb
amb
GS
GS
≤ 1 ms
≤ 10 μs
T
T
amb
amb
= 10 V
= 20 kΩ
≤ 25 °C
= 25 °C
= 25 °C;
= 25 °C
= 25 °C;
= 25 °C
= 25 °C
40 V, 2 A PNP BISS/Trench MOSFET module
= 25 °C
= 100 °C
[1]
[1]
[1]
[1]
[1]
[2]
[2]
PBSM5240PF
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
−55
−65
© NXP B.V. 2010. All rights reserved.
Max
−40
−40
−5
−2
−3
−300
−1
1.3
30
30
±8
0.66
0.42
3.56
200
0.66
150
+150
+150
2
.
Unit
V
V
V
A
A
mA
A
W
V
V
V
A
A
A
mW
A
°C
°C
°C
2
.
3 of 11