dmp2035uts Diodes, Inc., dmp2035uts Datasheet - Page 2

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dmp2035uts

Manufacturer Part Number
dmp2035uts
Description
Dual P-channel Enhancement Mode Mosfet
Manufacturer
Diodes, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
dmp2035uts-13
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
dmp2035uts-13
Quantity:
45 212
Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diodes Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMP2035UTS
Document number: DS31940 Rev. 3 - 2
5. Short duration pulse test used to minimize self-heating effects.
6. Guaranteed by design. Not subject to production testing.
30
25
20
15
10
5
0
0
0.5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
Characteristic
1
V
GS
V
1.5
V
= 2.5V
GS
V
GS
GS
= 3.0V
= 4.5V
= 8.0V
2
2.5
@T
3
A
= 25°C unless otherwise specified
3.5
V
V
GS
4
GS
= 1.5V
= 2.0V
4.5
Symbol
R
5
BV
V
www.diodes.com
DS (ON)
t
t
I
I
|Y
C
V
C
C
Q
D(on)
D(off)
GS(th)
Q
GSS
DSS
R
Q
t
t
SD
oss
DSS
iss
rss
gs
gd
fs
r
f
g
g
|
2 of 6
Min
-0.4
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
16
12
1610
9.45
15.4
16.8
12.4
94.1
42.4
Typ
-0.7
-0.7
157
145
8
4
0
2.5
3.3
23
30
41
14
-
-
-
0
V
DS
Fig. 2 Typical Transfer Characteristics
0.5
Max
-1.0
-1.0
-1.0
T = 85°C
±10
V
= 5V
35
45
62
A
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
T = 125°C
A
T = 150°C
, GATE SOURCE VOLTAGE (V)
A
1
Unit
mΩ
μA
μA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
T = -55°C
A
1.5
T = 25°C
A
V
V
V
V
V
V
V
V
Is = -1A, V
V
f = 1.0MHz
V
V
I
V
R
D
GS
DS
GS
DS
GS
GS
GS
DS
DS
DS
GS
DS
L
= -4A
= 10Ω, R
= -20V, V
= V
= -5V, I
= -10V, V
= 0V, V
= -10V, V
= 0V, I
= ±8V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -4.5V, V
2
GS
Test Condition
DMP2035UTS
, I
GS
D
D
GS
G
D
= -250μA
DS
D
D
D
= -4A
= 0V
GS
GS
GS
= -250μA
= 6.0Ω, I
DS
2.5
= 0V, f = 1MHz
= -4.0A
= -4.0A
= -2.0A
= 0V
© Diodes Incorporated
= 0V
= 0V,
= -4.5V,
= -10V,
January 2010
D
3
= -1A

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