dmp2035uts Diodes, Inc., dmp2035uts Datasheet - Page 4

• Manufacturer Part Number: dmp2035uts
• Description: Dual P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMP2035UTS
Document number: DS31940 Rev. 3 - 2
100,000
10,000
10,000
1,000
1,000
100
100
10
10
1
1
1
0
Fig. 11 Leakage Current vs. Gate-Source Voltage
0.001
Fig. 9 Typical Drain-Source Leakage Current
2
0.01
0.1
0.00001
2
V , DRAIN-SOURCE VOLTAGE (V)
V
1
DS
GS
4
, GATE-SOURCE VOLTAGE (V)
D = Single Pulse
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0.7
D = 0.5
D = 0.3
D = 0.1
vs. Drain-Source Voltage
3
T = 125°C
6
A
0.0001
8
4
T = 150°C
A
10 12
T = -55°C
A
5
T = 25°C
0.001
A
T = 150°C
T = 125°C
A
T = 85°C
14
A
A
6
T = 25°C
T = -55°C
A
A
T = 85°C
A
16
Fig. 13 Transient Thermal Response
7
t , PULSE DURATION TIME (s)
18 20
1
0.01
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8
D = 0.9
4 of 6
0.1
0.0001 0.001 0.01
10,000
100
1,000
90
80
70
60
50
40
30
20
10
100
0
10
1
Fig. 12 Single Pulse Maximum Power Dissipation
1
1
Fig. 10 Leakage Current vs. Gate-Source Voltage
t , PULSE DURATION TIME (s)
2
1
V
GS
P(pk)
Duty Cycle, D = t /t
10
, GATE-SOURCE VOLTAGE (V)
T - T = P * R
R
J
R
θJA
3
θ
T = 125°C
JA
t
A
(t) = r(t) *
A
1
t
= 143°C/W
2
0.1
4
T = 150°C
θ
R
A
JA
100
θ
1 2
JA
(t)
T = -55°C
1
A
5
T - T = P * R
R
J
R
θJA
10
T = 25°C
θ
Single Pulse
DMP2035UTS
A
JA
1,000
(t) = r(t) *
A
= 143°C/W
6
T = 85°C
100
A
© Diodes Incorporated
R
θ
JA
θJA
7
(t)
January 2010
1,000
8