dmp2035uts Diodes, Inc., dmp2035uts Datasheet - Page 3

• Manufacturer Part Number: dmp2035uts
• Description: Dual P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMP2035UTS
Document number: DS31940 Rev. 3 - 2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.10
0.08
0.06
0.04
0.02
1.2
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
-50
0
Fig. 5 On-Resistance Variation with Temperature
V
-25
GS
I = 10A
-25
D
V
T , AMBIENT TEMPERATURE (°C)
GS
= 4.5V
I = 5A
T , JUNCTION TEMPERATURE (°C)
D
A
I , DRAIN-SOURCE CURRENT (A)
5
vs. Drain Current and Gate Voltage
D
J
= 2.5V
I = 250µA
D
0
Fig. 3 Typical On-Resistance
0
10
25
V
25
GS
I = 1mA
D
= 1.8V
V
V
50
GS
GS
15
50
= 4.5V
= 2.5V
75
75
20
100
100
25
125 150
125 150
30
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0.06
0.05
0.04
0.03
0.02
0.01
0.06
0.05
0.04
0.03
0.02
0.01
20
16
12
8
4
0
0
-50
0
0
0
Fig. 6 On-Resistance Variation with Temperature
Fig. 4 Typical Drain-Source On-Resistance
-25
Fig. 8 Diode Forward Voltage vs. Current
0.2
V , SOURCE-DRAIN VOLTAGE (V)
V
T , JUNCTION TEMPERATURE (°C)
SD
GS
J
vs. Drain Current and Temperature
4
= 4.5V
0.4
0
V
I , DRAIN CURRENT (A)
D
GS
I = 5A
D
= 2.5V
25
0.6
8
T = 125°C
V
A
GS
I = 10A
T = 25°C
D
A
50
= 4.5V
0.8
12
75
T = 150°C
T = -55°C
1.0
T = 85°C
T = 25°C
DMP2035UTS
A
A
A
A
100
16
1.2
© Diodes Incorporated
125 150
January 2010
1.4
20