pa28f004sc-120 Intel Corporation, pa28f004sc-120 Datasheet - Page 2

• Manufacturer Part Number: pa28f004sc-120
• Description: 8-mbit 1-mbit X 8 Flashfiletm Memory
• Manufacturer: Intel Corporation

28F008SA
PRODUCT OVERVIEW
The 28F008SA is a high-performance 8-Mbit
(8 388 608 bit) memory organized as 1 Mbyte
(1 048 576 bytes) of 8 bits each Sixteen 64-Kbyte
(65 536 byte) blocks are included on the 28F008SA
A memory map is shown in Figure 6 of this specifica-
tion A block erase operation erases one of the six-
teen blocks of memory in typically 1 6 seconds in-
dependent of the remaining blocks Each block can
be independently erased and written 100 000 cy-
cles Erase Suspend mode allows system software
to suspend block erase to read data or execute
code from any other block of the 28F008SA
The 28F008SA is available in the 40-lead TSOP
(Thin Small Outline Package 1 2 mm thick) and 44-
lead PSOP (Plastic Small Outline) packages Pin-
outs are shown in Figures 2 and 4 of this specifica-
tion
The Command User Interface serves as the inter-
face between the microprocessor or microcontroller
and the internal operation of the 28F008SA
Byte Write and Block Erase Automation allow
byte write and block erase operations to be execut-
ed using a two-write command sequence to the
Command User Interface The internal Write State
Machine (WSM) automatically executes the algo-
rithms and timings necessary for byte write and
block erase operations
thereby unburdening the microprocessor or micro-
controller Writing of memory data is performed in
byte increments typically within 9 ms an 80% im-
provement over current flash memory products I
byte write and block erase currents are 10 mA
typical 30 mA maximum V
block erase voltage is 11 4V to 12 6V
2
including verifications
PP
byte write and
PP
The Status Register indicates the status of the
WSM and when the WSM successfully completes
the desired byte write or block erase operation
The RY BY
WSM activity providing capability for both hardware
signal of status (versus software polling) and status
masking (interrupt masking for background erase
for example) Status polling using RY BY
mizes both CPU overhead and system power con-
sumption When low RY BY
WSM is performing a block erase or byte write oper-
ation RY BY
for new commands block erase is suspended or the
device is in deep powerdown mode
Maximum access time is 85 ns (t
mercial temperature range (0 C to
V
5 25V) I
typical 35 mA maximum at 8 MHz
When the CE
CMOS Standby mode is enabled
A Deep Powerdown mode is enabled when the
RP
and providing write protection I
powerdown is 0 20 mA typical Reset time of 400 ns
is required from RP
valid to read attempts Equivalently the device has a
wake time of 1 ms from RP
Command User Interface are recognized by the
28F008SA With RP
and the Status Register is cleared
CC
supply voltage range (4 5V to 5 5V and 4 75V to
pin is at GND minimizing power consumption
CC
active current (CMOS Read) is 20 mA
output gives an additional indicator of
high indicates that the WSM is ready
and RP
switching high until outputs are
at GND the WSM is reset
pins are at V
high until writes to the
CC
ACC
indicates that the
a
current in deep
) over the com-
70 C) and over
CC
the I
mini-
CC