pa28f004sc-120 Intel Corporation, pa28f004sc-120 Datasheet - Page 31

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pa28f004sc-120

Manufacturer Part Number
pa28f004sc-120
Description
8-mbit 1-mbit X 8 Flashfiletm Memory
Manufacturer
Intel Corporation
Datasheet
EXTENDED TEMPERATURE OPERATION
ALTERNATIVE CE -CONTROLLED WRITES
NOTES
1 Chip-Enable Controlled Writes Write operations are driven by the valid combination of CE
CE
measured relative to the CE
2 Sampled not 100% tested
3 Refer to Table 3 for valid A
4 Refer to Table 3 for valid D
5 Byte write and block erase durations are measured to completion (SR 7
V
6 See High Speed AC Input Output Reference Waveforms and High Speed AC Testing Load Circuits for testing characteris-
tics
7 See AC Input Output Reference Waveforms and AC Testing Load Circuits for testing characteristics
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
PPH
AVAV
PHEL
WLEL
ELEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHQV1
EHQV2
EHGL
QVVL
Symbol
defines the write pulsewidth (within a longer WE
until determination of byte write block erase success (SR 3 4 5
t
t
t
t
t
t
t
t
t
t
t
t
WC
PS
WS
CP
VPS
AS
DS
DH
AH
WH
EPH
VPH
Write Cycle Time
RP
WE
CE
V
Address Setup to CE
Data Setup to CE
Data Hold from CE
Address Hold from CE
WE
CE
CE
Duration of Byte Write Operation
Duration of Block Erase Operation
Write Recovery before Read
V
PP
PP
Setup to CE
Hold from Valid SRD RY BY
High Recovery to CE
Pulse Width
Pulse Width High
High to RY BY
Setup to CE
Hold from CE
Versions
IN
IN
waveform
for byte write or block erasure
for byte write or block erasure
Going High
Going High
Going Low
Parameter
High
High
Going Low
Going High
High
Going Low
High
timing waveform) all setup hold and inactive WE
V
CC g
e
Notes
0)
10%
2 5
2
2
3
4
5
5
e
1 RY BY
Min
100
100
0 3
50
40
40
25
1
0
5
5
0
6
0
0
28F008SA-100
e
and WE
V
OH
) V
PP
(7)
Max
100
should be held at
In systems where
times should be
28F008SA
Unit
sec
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
31

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