km29w040ait Samsung Semiconductor, Inc., km29w040ait Datasheet - Page 3

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km29w040ait

Manufacturer Part Number
km29w040ait
Description
512k X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
KM29W040AT, KM29W040AIT
Figure 1. FUNCTIONAL BLOCK DIAGRAM
Figure 2. ARRAY ORGANIZATION
4M : 4K Row
(=128 Blocks)
NOTE : *(1) : X can be V
2nd Cycle
3rd Cycle
1st Cycle
CE
RE
WE
Command
I/O
A
A
A
A
A
16
0
8
7
0
0
- A
1
- A
128Byte Column
IL
18
6
or V
I/O
A
The 1st Block (4KB)
A
A
17
Frame Register
IH
1
9
32 Byte
1
2
& High Voltage
CLE ALE WP
Control Logic
Command
X-Buffers
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Generator
I/O
A
A
Register
A
10
18
2
2
3
I/O
X*
A
A
11
3
(1)
3
4
I/O
A
A
X*
12
4
4
3
I/O
I/O
A
A
X*
0
13
5
~ I/O
5
32Byte x 4frame x 4096row
7
8 bit
NAND Flash ARRAY
I/O Buffers & Latches
Page Register & S/A
I/O
A
A
*X
14
Global Buffers
6
6
Good Block
1Block(32Row)
(4K Byte)
1 Frame = 32 Byte
1 Row
1 Device = 32B x 4frames x 32rows x 128blocks
Y-Gating
4M Bit
I/O
1 Block = 32 rows = 4K Bytes
A
A
*X
15
7
7
= 4 Frames = 128 Bytes
= 4Mbits
Column Address (A
Frame Address (A
Row Address (A
Block Address (A
FLASH MEMORY
I/O
I/O
0
7
7
-A
12
5
-A
11
-A
0
-A
)
6
18
)
4
)
)

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