km29w040ait Samsung Semiconductor, Inc., km29w040ait Datasheet - Page 8

• Manufacturer Part Number: km29w040ait
• Description: 512k X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

AC Timing Characteristics for Command / Address / Data Input
AC Characteristics for Operation
NOTE : 1. If CE goes high within 50ns after the third address input, R/B will not return to V
KM29W040AT, KM29W040AIT
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Set-up Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Data Transfer from Cell to Register
ALE to RE Delay
CE low to RE low (ID read)
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE High Hold Time
Output Hi-Z to RE Low
CE High to Ready(in case of interception by CE at read)
RE Low to Status Output
CE Low to Status Output
WE High to RE Low
RE access time(Read ID)
Device Resetting Time
2. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Parameter
(Read/Program/Erase)
Parameter
Symbol
t
t
t
t
(1)
t
t
t
t
t
t
t
CLS
CLH
ALS
ALH
WH
WP
WC
CS
CH
DS
DH
8
Symbol
t
t
t
WHRID
t
t
t
t
t
t
RSTO
CSTO
t
t
WHR
t
t
t
t
t
REA
RHZ
CHZ
REH
CRY
RST
t
WB
t
AR
CR
RR
RP
RC
IR
R
Min
120
OL
50
50
50
50
60
50
50
40
20
40
.
Min
250
250
100
120
100
60
40
50
0
0
-
-
-
-
-
-
-
-
FLASH MEMORY
Max
100+tr(R/B)
-
-
-
-
-
-
-
-
-
-
-
5/10/500
Max
200
15
50
30
50
60
70
-
-
-
-
-
-
-
-
-
(2)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s