hat2174ns Renesas Electronics Corporation., hat2174ns Datasheet
hat2174ns
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hat2174ns Summary of contents
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HAT2174N Silicon N Channel Power MOS FET Power Switching Features Capable gate drive Low drive current High density mounting Low on-resistance R = 21.3 m typ. ( DS(on) GS Outline RENESAS Package code: ...
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HAT2174N Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input ...
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HAT2174N Main Characteristics Power vs. Temperature Derating 100 Case Temperature Tc (°C) Typical Output Characteristics 20 V =10 V Pulse Test Drain to Source ...
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HAT2174N Static Drain to Source on State Resistance vs. Temperature 100 Pulse Test - Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time 100 50 ...
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HAT2174N Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 1.2 Source to Drain Voltage 0.5 0.3 0.1 0.03 ...
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HAT2174N Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V REJ03G1685-0200 Rev.2.00 May 28, 2008 Page Vout Monitor R Vin L Vout d(on) Switching Time Waveform 90% 10% 10% ...
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HAT2174N Package Dimensions Package Name JEITA Package Code RENESAS Code LFPAK-i PTSP0008DC-A 4.9 5.3Max 8 1 3.3 1.27 Ordering Information Part No. HAT2174N-EL-E 2500 pcs REJ03G1685-0200 Rev.2.00 May 28, 2008 Page Previous Code MASS[Typ.] LFPAK-iV 0.080g ...
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Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...