hat2174ns Renesas Electronics Corporation., hat2174ns Datasheet - Page 3

• Manufacturer Part Number: hat2174ns
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2174N
Main Characteristics
REJ03G1685-0200 Rev.2.00 May 28, 2008
Page 3 of 7
500
400
300
200
100
20
16
12
40
30
20
10
8
4
0
0
Drain to Source Saturation Voltage vs.
0
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature Tc (°C)
8 V
V
GS
2
Gate to Source Voltage
4
50
=10 V
4
8
100
Pulse Test
12
6
5.0 V
Pulse Test
150
I
D
16
8
= 10 A
GS
DS
5.8 V
5.6 V
5.4 V
5.2 V
5 A
2 A
(V)
(V)
200
10
20
0.01
100
500
100
Static Drain to Source on State Resistance
0.1
20
16
12
50
20
10
10
1
8
4
5
2
1
0
0.1 0.3
1
Drain to Source Voltage V
Pulse Test
Operation in
this area is
limited by R
Gate to Source Voltage V
Tc = 25°C
1 shot Pulse
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
2
= 10 V
Tc = 75°C
2
Drain Current I
1
vs. Drain Current
5
DS(on)
3
4
10
10
6
V
20
GS
30
25°C
D
-25°C
= 8 V
(A)
10 V
100
8
GS
DS
50
(V)
(V)
500
100
10