hat2174ns Renesas Electronics Corporation., hat2174ns Datasheet - Page 2

• Manufacturer Part Number: hat2174ns
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2174N
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
REJ03G1685-0200 Rev.2.00 May 28, 2008
Page 2 of 7
Item
Symbol
V
V
R
R
V
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
Qgs
Qgd
t
t
I
I
V
GS(off)
|y
DS(on)
DS(on)
Qg
Rg
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
Min
100
±20
4.0
21
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2280
21.3
22.3
33.5
12.4
0.84
Typ
285
100
0.5
8.4
5.5
35
18
13
31
50
—
—
—
—
—
Max
27.3
30.3
1.10
±10
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
f = 1 MHz
V
I
V
V
Rg = 4.7
I
I
di
D
G
D
D
D
D
F
F
GS
DS
DS
DS
DD
GS
DD
F
= 20 A, V
= 20 A, V
= 10 mA, V
= 10 A, V
= 10 A, V
= 10 A, V
= 20 A
= ±100 A, V
/ dt = 100 A/ s
= ±16 V, V
= 100 V, V
= 10 V, I
= 10 V,V
= 50 V, V
= 10 V, I
30 V, R
Test Conditions
GS
GS
GS
GS
DS
D
D
GS
GS
GS
L
= 0
= 0
= 20mA
= 10 V
= 8 V
= 10 V
= 10 A,
DS
GS
= 3 ,
DS
= 0,
= 0
= 10 V,
= 0
= 0
Note4
= 0
Note4
(Ta = 25°C)
Note4
Note4