hat2033rj Renesas Electronics Corporation., hat2033rj Datasheet

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hat2033rj

Manufacturer Part Number
hat2033rj
Description
Silicon N Channel Power Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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HAT2033R, HAT2033RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Outline
Rev.4.00 Sep 07, 2005 page 1 of 7
For Automotive Application (at Type Code “J”)
Low on-resistance
Capable of 4 V gate drive
High density mounting
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8
7
6
5
1 2
3 4
G
4
D
5 6 7 8
S S S
1 2 3
D D D
1, 2, 3
4
5, 6, 7, 8
(Previous: ADE-208-664B)
REJ03G1165-0400
Source
Gate
Drain
Sep 07, 2005
Rev.4.00

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hat2033rj Summary of contents

Page 1

... HAT2033R, HAT2033RJ Silicon N Channel Power MOS FET High Speed Power Switching Features For Automotive Application (at Type Code “J”) Low on-resistance Capable gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) Rev.4.00 Sep 07, 2005 page ...

Page 2

... HAT2033R, HAT2033RJ Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2033R HAT2033RJ Avalanche energy HAT2033R HAT2033RJ Channel dissipation Channel temperature Storage temperature Notes duty cycle 2 ...

Page 3

... HAT2033R, HAT2033RJ Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics Drain to Source Voltage Drain to Source Saturation Voltage vs. ...

Page 4

... HAT2033R, HAT2033RJ Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 0. 0.04 0. – Case Temperature Body-Drain Diode Reverse Recovery Time 1000 µs V 500 200 100 0.1 0 Reverse Drain Current I Dynamic Input Characteristics 100 ...

Page 5

... HAT2033R, HAT2033RJ Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Avalanche Test Circuit V DS Monitor Rg Vin 50 Ω Rev.4.00 Sep 07, 2005 page – ...

Page 6

... HAT2033R, HAT2033RJ Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω Rev.4.00 Sep 07, 2005 page Vout Monitor Vin R L Vout d(on) Switching Time Waveform 90% 10% 10% 10% 90% 90 d(off ...

Page 7

... HAT2033R, HAT2033RJ Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD Index mark Ordering Information Part Name HAT2033R-EL-E 2500 pcs HAT2033RJ-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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