hat2033rj Renesas Electronics Corporation., hat2033rj Datasheet - Page 3

• Manufacturer Part Number: hat2033rj
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2033R, HAT2033RJ
Main Characteristics
Rev.4.00 Sep 07, 2005 page 3 of 7
4.0
3.0
2.0
1.0
0.5
0.4
0.3
0.2
0.1
50
40
30
20
10
0
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
Gate to Source Voltage
2
4
50
10 V
6 V
8
4
100
12
6
2 A
V
150
GS
Pulse Test
Pulse Test
Ta (°C)
V
V
16
I
= 2.5 V
8
GS
DS
D
1 A
4.5 V
3.5 V
= 5 A
4 V
3 V
(V)
(V)
200
10
20
0.03
0.01
0.05
0.02
0.01
100
0.3
0.1
Static Drain to Source on State Resistance
0.5
0.2
0.1
30
10
20
16
12
3
1
8
4
0
0.1
0.1 0.2
0
Drain to Source Voltage
Gate to Source Voltage
Pulse Test
Ta = 25°C
1 shot Pulse
1 Drive Operation
V
Pulse Test
Operation in
this area is
limited by R
Note 5:
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.3
= 10 V
Drain Current
Tc = 75°C
1
0.5 1
vs. Drain Current
1
DS (on)
2
V
GS
2
3
= 4 V
10 V
3
5
I
10
D
–25°C
25°C
10
(A)
V
V
4
30
GS
DS
20
10 µs
(V)
(V)
100
50
5