hat2033rj Renesas Electronics Corporation., hat2033rj Datasheet - Page 4

• Manufacturer Part Number: hat2033rj
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2033R, HAT2033RJ
Rev.4.00 Sep 07, 2005 page 4 of 7
1000
0.10
0.08
0.06
0.04
0.02
500
200
100
100
Static Drain to Source on State Resistance
50
20
10
80
60
40
20
0
–40
0
0.1
0
V
I
Reverse Drain Current I
DS
Pulse Test
D
Case Temperature
Dynamic Input Characteristics
V
= 7 A
GS
Body-Drain Diode Reverse
0.3
10 V
Gate Charge
0
8
= 4 V
V
DD
vs. Temperature
Recovery Time
1
= 50 V
40
25 V
10 V
16
V
DD
di / dt = 50 A / µs
V
3
= 50 V
GS
1, 2, 5 A
25 V
10 V
I
80
24
D
= 0, Ta = 25°C
Qg (nc)
= 1, 2 A
10
Tc
DR
120
V
32
30
GS
(°C)
5 A
(A)
160
100
40
20
16
12
8
4
0
5000
2000
1000
1000
200
100
300
100
500
0.5
50
20
10
50
20
10
30
10
5
2
1
3
1
0.1
0.1
0
Drain to Source Voltage V
V
f = 1 MHz
Forward Transfer Admittance vs.
t f
GS
0.3
0.3
Switching Characteristics
= 0
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current
Drain Current I
25°C
t r
t d(off)
Tc = –25°C
Drain Current
1
1
20
V
PW = 3 µs, duty ≤ 1 %
75°C
GS
3
3
= 4 V, V
30
I
10
10
D
D
V
Pulse Test
t d(on)
DS
DD
(A)
(A)
= 10 V
40
30
DS
= 30 V
30
Coss
Ciss
Crss
(V)
100
100
50