upa1852gr-9jg Renesas Electronics Corporation., upa1852gr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1852gr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
25
20
10
80
60
40
15
1.5
0.5
20
5
0
1
0
0
50
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
I
D
DS
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 1 mA
= 10 V
T
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
0.2
ch
DS
T
A
- Drain to Source Voltage - V
0
- Channel Temperature - ˚C
- Ambient Temperature - ˚C
60
0.4
50
V
GS
90
0.6
= 4.5 V
A
100
4.0 V
= 25°C)
120
0.8
2.5 V
Data Sheet D12803EJ2V0DS
150
150
1
0.001
0.01
100
0.01
100
100
0.1
0.1
0.1
10
10
10
1
1
1
0.1
0.1
0
V
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
P
V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
FORWARD BIAS SAFE OPERATING AREA
D
DS
DS
(FET1) : P
= 10 V
= 10 V
V
TRANSFER CHARACTERISTICS
V
DS
GS
- Drain to Source Voltage - V
1
- Gate to Source Voltage - V
D
T
(FET2) = 1:1
A
I
1.0
25 ˚C
D
= 25 ˚C
1
- Drain Current - A
2
125 ˚C
75 ˚C
2
10.0
10
3
PA1852
100.0
100
4
3