upa1852gr-9jg Renesas Electronics Corporation., upa1852gr-9jg Datasheet - Page 5

• Manufacturer Part Number: upa1852gr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

1000
100
10
6
5
4
3
2
1
0
0.1
0
V
V
R
I
D
DD
GS
G
= 6.0 A
DYNAMIC INPUT CHARACTERISTICS
(
= 10
= 10V
on
SWITCHING CHARACTERISTICS
) = 4.0V
2
I
Q
D
G
- Drain Current - A
1000
1
V
- Gate Charge - nC
100
0.1
DD
10
1
1m
= 10 V
4
10
10m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
6
td
tr
td
tf
(off)
(on)
Data Sheet D12803EJ2V0DS
100
100m
8
PW - Pulse Width - S
1
0.0001
0.001
0.01
0.1
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
0.4
10
Mounted on Ceramic Substrate
of 50cm x 1.1mm
Single Pulse
P
V
D
F(S-D)
(FET1) : P
2
- Source to Drain Voltage - V
0.6
100
D
(FET2) = 1:1
62.5 ˚C/W
1000
0.8
V
GS
= 0 V
PA1852
1
5