upa1852gr-9jg Renesas Electronics Corporation., upa1852gr-9jg Datasheet - Page 4

no-image

upa1852gr-9jg

Manufacturer Part Number
upa1852gr-9jg
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
4
80
70
60
20
20
20
80
60
40
30
30
50
40
60
50
40
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.1
0
V
V
GS
GS
= 2.5 V
= 4.5 V
V
2
GS
I
D
I
- Gate to Source Voltage - V
D
- Drain Current - A
- Drain Current - A
T
T
1
1
A
4
A
= 125˚C
= 125˚C
25˚C
75˚C
25˚C
75˚C
25˚C
25˚C
6
10
10
8
I
D
= 3.0 A
10
Data Sheet D12803EJ2V0DS
100
100
12
1000
100
20
30
10
60
50
40
80
60
40
20
0
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
0.1
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
I
D
V
= 3.0 A
GS
V
= 4.0 V
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
ch
T
0
- Drain to Source Voltage - V
I
A
D
- Channel Temperature -˚C
- Drain Current - A
= 125˚C
1
1
75˚C
25˚C
25˚C
50
V
GS
10
10
= 2.5 V
100
f = 1 MHz
C
C
C
4.0 V
4.5 V
iss
oss
rss
PA1852
100
150
100

Related parts for upa1852gr-9jg