upa1873gr-9jg Renesas Electronics Corporation., upa1873gr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1873gr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
1.5
1.0
0.5
100
15
25
20
10
40
80
60
20
50
5
0
0
0
V
I
D
0
DS
Pulsed
= 1mA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 10 V
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.2
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
ch
30
T
DS
0
- Channel Temperature - ˚C
A
- Drain to Source Voltage - V
- Ambient Temperature - ˚C
0.4
60
2.5 V
50
3.1 V
90
0.6
4.0 V
V
GS
100
A
= 4.5 V
120
= 25°C)
0.8
150
150
1.0
Data Sheet G15629EJ1V0DS
0.00001
100.00
0.0001
10.00
1000
0.001
0.01
0.10
0.01
1.00
100
0.01
0.1
100
10
0.1
10
1
0.01
0.1
1
0
FORWARD BIAS SAFE OPERATING AREA
V
FORWARD TRANSFER CHARACTERISTICS
Single Pulse
P
Pulsed
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
V
Pulsed
DS
D
DS
(FET1) : P
= 10 V
= 10 V
V
V
0.5
DS
GS
0.1
- Gate to Source Voltage - V
- Drain to Source Voltage - V
I
D
D
(FET2) = 1:1
- Drain Current - A
1
1
125 ˚C
T
1
75 ˚C
A
25 ˚C
= 25 ˚C
1.5
10
10
2
PA1873
100
100
2.5
3