upa1873gr-9jg Renesas Electronics Corporation., upa1873gr-9jg Datasheet - Page 4

• Manufacturer Part Number: upa1873gr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
40
30
20
10
30
20
10
40
40
30
20
10
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
I
Pulsed
Pulsed
V
D
Pulsed
V
GS
= 3 A
GS
= 2.5 V
= 4.0 V
0.1
T
0.1
ch
I
0
D
I
D
- Channel Temperature - ˚C
- Drain Current - A
T
- Drain Current - A
A
T
= 125˚C
A
75˚C
25˚C
25˚C
= 125˚C
1
25˚C
75˚C
25˚C
1
50
10
10
100
V
GS
= 2.5 V
3.1 V
4.0 V
4.5 V
Data Sheet G15629EJ1V0DS
100
100
150
40
30
20
10
40
30
20
10
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
60
40
30
20
50
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
V
0
GS
Pulsed
V
GS
= 3.1 V
= 4.5 V
0.1
2
V
0.1
I
D
GS
T
I
- Drain Current - A
D
A
- Gate to Source Voltage - V
T
- Drain Current - A
= 125˚C
A
4
= 125˚C
25˚C
75˚C
25˚C
25˚C
75˚C
25˚C
1
1
6
8
10
10
Pulsed
I
D
10
= 3.0 A
100
PA1873
100
12