upa1873gr-9jg Renesas Electronics Corporation., upa1873gr-9jg Datasheet - Page 5

• Manufacturer Part Number: upa1873gr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

10000
1000
0.01
100
100
0.1
10
10
1
0.4
0.1
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
V
Pulsed
GS
= 0 V
V
V
F(S-D)
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
DS
0.6
1000
- Drain to Source Voltage - V
0.1
100
0.001
10
- Source to Drain Voltage - V
1
1
Single Pulse
P
D
(FET1) : P
0.8
0.01
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
D
(FET2) = 1:1
1.0
V
f = 1 MHz
GS
C
C
C
= 0 V
Data Sheet G15629EJ1V0DS
oss
rss
iss
0.1
100
1.2
PW - Pulse Width - s
1
Mounted on ceramic board of 50 cm
1000
100
Mounted on FR-4 board of 25 cm
10
0.1
4
3
2
1
0
5
0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
V
R
DD
GS
G
I
= 10
D
SWITCHING CHARACTERISTICS
= 10 V
= 4.0 V
10
= 6.0 A
t
d (off)
t
t
62.5˚C/W
t
f
d (on)
r
125˚C/W
V
I
DD
Q
D
- Drain Current - A
G
= 16 V
4
- Gate Charge - nC
10 V
100
1
2
2
x 1.1 mm
x 1.6 mm
8
1000
PA1873
10
12
5