k6r1016c1d Samsung Semiconductor, Inc., k6r1016c1d Datasheet - Page 6

• Manufacturer Part Number: k6r1016c1d
• Description: 64kx16 Bit High-speed Cmos Static Ram 5.0v Operating . Operated At Commercial And Industrial Temperature Ranges.
• Manufacturer: Samsung Semiconductor, Inc.

K6R1016C1D
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
TIMING DIAGRAMS
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
UB, LB Access Time
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
UB, LB Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
UB, LB Valid to End of Write
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
Address
Data Out
Parameter
Parameter
Previous Valid Data
Symbol
t
t
t
t
t
t
t
t
t
t
WP1
WHZ
t
t
WC
CW
WP
BW
WR
DW
OW
AW
DH
AS
Symbol
t
t
t
t
t
t
t
t
t
t
t
OHZ
t
t
t
OLZ
BHZ
BLZ
CO
OH
RC
AA
OE
BA
HZ
PU
PD
LZ
(Address Controlled
t
OH
Min
10
10
7
0
7
7
7
0
0
5
0
3
Min
10
3
0
0
0
0
0
3
0
-
-
-
-
-
- 6 -
t
AA
K6R1016C1D-10
,
K6R1016C1D-10
CS=OE=V
t
RC
IL
, WE=V
IH
Max
, UB, LB=V
5
-
-
-
-
-
-
-
-
-
-
-
Max
10
10
10
5
5
5
5
5
-
-
-
-
-
-
IL
PRELIMINARY
Valid Data
CMOS SRAM
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
July 2004
Rev. 3.0