m28f101-100xp6 STMicroelectronics, m28f101-100xp6 Datasheet - Page 3

• Manufacturer Part Number: m28f101-100xp6
• Description: 128k Chip Erase Flash Memory
• Manufacturer: STMicroelectronics

Table 2. Absolute Maximum Ratings
Note: Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above
those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.
DEVICE OPERATION
The M28F101 FLASH Memory employs a technol-
ogy similar to a 1 Megabit EPROM but adds to the
device functionality by providing electrical erasure
and programming. These functions are managed
by a command register. The functions that are
addressed via the command register depend on
the voltage applied to the V
input. When V
command register is disabled and M28F101 func-
tions as a read only memory providing operating
modes similar to an EPROM (Read, Output Dis-
able, Electronic Signature Read and Standby).
When V
is enabled and this provides, in addition, Erase and
Program operations.
READ ONLY MODES, V
For all Read Only Modes, except Standby Mode,
the Write Enable input W should be High. In the
Standby Mode this input is don’t care.
Read Mode. The M28F101 has two enable inputs,
E and G, both of which must be Low in order to
output data from the memory. The Chip Enable (E)
is the power control and should be used for device
selection. Output Enable (G) is the output control
and should be used to gate data on to the output,
independant of the device selection.
Standby Mode. In the Standby Mode the maxi-
mum supply current is reduced. The device is
placed in the Standby Mode by applying a High to
the Chip Enable (E) input. When in the Standby
Mode the outputs are in a high impedance state,
independant of the Output Enable (G) input.
Symbol
T
V
V
V
V
T
PP
STG
CC
PP
IO
A9
A
is raised to 12V the command regsiter
PP
is less than or equal to 6.5V, the
Ambient Operating Temperature
Storage Temperature
Input or Output Voltages
Supply Voltage
A9 Voltage
Program Supply Voltage, during Erase
or Programming
PP
PP
6.5V
, program voltage,
Parameter
Output Disable Mode. When the Output Enable
(G) is High the outputs are in a high impedance
state.
Electronic Signature Mode. This mode allows the
read out of two binary codes from the device which
identify the manufacturer and device type. This
mode is intended for use by programming equip-
ment to automatically select the correct erase and
programming algorithms. The Electronic Signature
Mode is active when a high voltage (11.5V to 13V)
is applied to address line A9 with E and G Low. With
A0 Low the output data is the manufacturer code,
when A0 is High the output is the device type code.
All other address lines should be maintained Low
while reading the codes. The electronic signature
may also be accessed in Read/Write modes.
READ/WRITE MODES, 11.4V V
When V
may be performed. These are defined by the con-
tents of an internal command register. Commands
may be written to this register to set-up and exe-
cute, Erase, Erase Verify, Program, Program Verify
and Reset modes. Each of these modes needs 2
cycles. Eah mode starts with a write operation to
set-up the command, this is followed by either read
or write operations. The device expects the first
cycle to be a write operation and does not corrupt
data at any location in the memory. Read mode is
set-up with one cycle only and may be followed by
any number of read operations to output data.
Electronic Signature Read mode is set-up with one
cycle and followed by a read cycle to output the
manufacturer or device codes.
PP
is High both read and write operations
–40 to 125
–0.6 to 7
–0.6 to 7
–0.6 to 13.5
–0.6 to 14
–65 to 150
Value
PP
M28F101
12.6V
Unit
V
V
V
V
C
C
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