m28f101-100xp6 STMicroelectronics, m28f101-100xp6 Datasheet - Page 7

• Manufacturer Part Number: m28f101-100xp6
• Description: 128k Chip Erase Flash Memory
• Manufacturer: STMicroelectronics

Table 9A. Read Only Mode AC Characteristics
(T
Note: 1. Sampled only, not 100% tested
Read Mode. The Read Mode is the default at
power up or may be set-up by writing 00h to the
command register. Subsequent read operations
output data from the memory. The memory remains
in the Read Mode until a new command is written
to the command register.
Electronic Signature Mode. In order to select the
correct erase and programming algorithms for on-
board programming, the manufacturer and device
Symbol
t
t
t
t
A
GLQX
EHQZ
GHQZ
ELQX
t
t
t
t
t
t
WHGL
AVQV
GLQV
AXQX
AVAV
ELQV
= 0 to 70 C, –40 to 85 C or –40 to 125 C; 0V V
(1)
(1)
(1)
(1)
t
t
Alt
t
t
ACC
t
t
t
t
OLZ
RC
CE
OE
OH
DF
LZ
Write Enable High to
Output Enable Low
Read Cycle Time
Address Valid to
Output Valid
Chip Enable Low to
Output Transition
Chip Enable Low to
Output Valid
Output Enable Low to
Output Transition
Output Enable Low to
Output Valid
Chip Enable High to
Output Hi-Z
Output Enable High to
Output Hi-Z
Address Transition to
Output Transition
Parameter
Test Condition
E = V
E = V
E = V
G = V
G = V
G = V
E = V
E = V
E = V
IL
IL
IL
, G = V
, G = V
, G = V
IL
IL
IL
IL
IL
IL
IL
IL
IL
codes may be read directly. It is not neccessary to
apply a high voltage to A9 when using the com-
mand register. The Electronic Signature Mode is
set-up by writing 90h to the command register. The
following read cycles, with address inputs 00000h
or 00001h, output the manufacturer or device type
codes. The command is terminated by writing an-
other valid command to the command register (for
example Reset).
PP
V
Min
70
CC
Interface
6
0
0
0
0
0
6.5V)
SRAM
=5V 5%
-70
Max
70
70
40
30
30
V
Min
CC
90
M28F101
Interface
6
0
0
0
0
0
EPROM
=5V 10% V
-90
Max
90
90
40
45
30
Min
100
CC
Interface
6
0
0
0
0
0
EPROM
=5V 10%
-100
Max
100
100
45
45
30
M28F101
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
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