m28f008 Intel Corporation, m28f008 Datasheet - Page 16

• Manufacturer Part Number: m28f008
• Description: 8 Mbit 1 Mbit X 8 Flash Memory
• Manufacturer: Intel Corporation

M28F008
ABSOLUTE MAXIMUM RATINGS
Operating Temperature
Temperature Under Bias
Storage Temperature
Voltage on Any Pin
V
V
Output Short Circuit Current
NOTES
1 Minimum DC voltage is
for periods
2 Maximum DC voltage on V
3 Output shorted for no more than one second No more than one output shorted at a time
OPERATING CONDITIONS
DC CHARACTERISTICS
16
k
Symbol
I
I
I
I
I
PP
CC
LI
LO
CCS
CCD
CCR
20 ns Maximum DC voltage on input output pins is V
(except V
with Respect to GND
Respect to GND during
Block Erase Byte Write
with Respect to GND
Program Voltage with
Supply Voltage
Symbol
T
V
C
CC
k
Input Load Current
Output Load Current
V
V
V
20 ns
CC
CC
CC
CC
and V
Standby Current
Deep Powerdown Current
Read Current
Parameter
PP
)
b
0 5V on input output pins During transitions this level may undershoot to
Operating Temperature
V
PP
CC
may overshoot to
b
Supply Voltage (10%)
2 0V to
b
b
b
b
b
Parameter
2 0V to
2 0V to
55 C to
55 C to
65 C to
a
14 0V
100 mA
a
a
a
a
a
Notes
a
7 0V
7 0V
1 3
125 C
125 C
125 C
1
1
1
1
14 0V for periods
(1 2)
CC
(1)
(1)
(3)
a
MC28F008 and
0 5V which during transitions may overshoot to V
Min
Maximum Ratings’’ may cause permanent damage
These are stress ratings only Operation beyond the
‘‘Operating Conditions’’ is not recommended and ex-
tended exposure beyond the ‘‘Operating Conditions’’
may affect device reliability
MF28F008
WARNING Stressing the device beyond the ‘‘Absolute
NOTICE This data sheet contains preliminary infor-
mation on new products in production The specifica-
tions are subject to change without notice Verify with
your local Intel Sales office that you have the latest
data sheet before finalizing a design
k
b
20 ns
4 50
Min
g
Max
g
150
100
2 0
35
50
55
1 0
10
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
CE
V
CE
RP
I
V
F
CMOS Inputs
V
F
TTL Inputs
OUT
a
Max
5 50
CC
IN
CC
OUT
CC
CC
CC
CC
e
e
125
e
e
e
e
e
e
e
e
e
8 MHz I
e
8 MHz I
(RY BY)
e
Test Conditions
RP
RP
GND
V
V
V
V
V
V
V
CC
CC
CC
V
CC
CC
CC
CC
e
e
CC
or GND
g
Max
Max
Max
Max
Max CE
Max CE
V
V
OUT
OUT
b
or GND
0 2V
IH
CC g
e
2 0V for periods
0 mA
e
e
0 2V
Unit
CC
0 mA
0 mA
e
e
V
C
a
GND
V
IL
2 0V