m28f008 Intel Corporation, m28f008 Datasheet - Page 20

• Manufacturer Part Number: m28f008
• Description: 8 Mbit 1 Mbit X 8 Flash Memory
• Manufacturer: Intel Corporation

M28F008
AC CHARACTERISTICS Write Operations
NOTES
1 Read timing characteristics during erase and byte write operations are the same as during read-only operations Refer to
AC Characteristics for Read-Only Operations
2 Sampled not 100% tested
3 Refer to Table 3 for valid A
4 Refer to Table 3 for valid D
5 The on-chip Write State Machine incorporates all byte write and block erase system functions and overhead of standard
Intel flash memory including byte program and verify (byte write) and block precondition precondition verify erase and
erase verify (block erase)
6 Byte write and block erase durations are measured to completion (SR 7
V
7 See AC Input Output Reference Waveforms and AC Testing Load Circuits for testing characteristics
20
PPH
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHQV1
WHQV2
WHGL
QVVL
until determination of byte write block erase success (SR 3 4 5
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
WC
PS
CS
WP
VPS
AS
DS
DH
AH
CH
WPH
VPH
Write Cycle Time
RP High Recovery to WE
Going Low
CE Setup to WE Going Low
WE Pulse Width
V
High
Address Setup to WE Going
High
Data Setup to WE Going
High
Data Hold from WE High
Address Hold from WE High
CE Hold from WE High
WE Pulse Width High
WE High to RY BY Going
Low
Duration of Byte Write
Operation
Duration of Block Erase
Operation
Write Recovery before
Read
V
RY BY High
PP
PP
Setup to WE Going
Hold from Valid SRD
IN
IN
for byte write or block erasure
for byte write or block erasure
Parameter
Notes
5 6
5 6
2 6
2
2
3
4
(1 7)
e
M28F008-10
Min
100
100
0 3
10
40
40
40
10
30
0)
1
5
5
6
0
0
e
1 RY BY
Max
100
(7)
e
V
M28F008-12
Min
120
100
OH
0 3
10
40
40
40
10
30
1
5
5
6
0
0
) V
PP
should be held at
Max
100
(7)
Unit
sec
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns