upa2782gr Renesas Electronics Corporation., upa2782gr Datasheet

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upa2782gr

Manufacturer Part Number
upa2782gr
Description
Switching N-channel Power Mosfet/schottky Barrier Diode
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2782GR.pdf (6 pages)

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Document No. G16421EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
Total Power Dissipation
Schottky Barrier Diode inside.
application.
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) [MOSFET]
Drain Current (pulse)
Average Forward Current
Total Power Dissipation
Channel & Junction Temperature
Storage Temperature
Notes 1. PW
The PA2782GR is N-Channel Power MOSFET, which built a
This product is designed for synchronous DC/DC converter
Built a Schottky Barrier Diode
Low on-state resistance
R
R
R
Low C
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Rectangle wave, 50% Duty Cycle
3. Mounted on ceramic substrate of 1200 mm
iss
PA2782GR
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
= 11 m TYP. (V
= 16 m TYP. (V
= 19 m TYP. (V
: C
N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
iss
= 660 pF TYP.
10 s, Duty Cycle
Note1
Note3
Note3
Note2
DS
GS
GS
GS
GS
= 0 V)
[SCHOTTKY]
[MOSFET]
= 0 V)
= 10 V, I
= 4.5 V, I
= 4.0 V, I
[SCHOTTKY]
1%
Power SOP8
PACKAGE
D
D
D
= 5.5 A)
= 5.5 A)
= 5.5 A)
A
= 25° C. All terminals are connected.)
DATA SHEET
SWITCHING
I
T
2
D(pulse)
I
V
V
I
D(DC)
T
F(AV)
ch
P
P
x 2.2 mm
DSS
GSS
stg
, T
T
T
MOS FIELD EFFECT TRANSISTOR
j
55 to + 150
±20
±11
±44
150
2.5
30
2
1
PACKAGE DRAWING (Unit: mm)
8
1
5.37 MAX.
0.40
1.27
W
W
°C
°C
V
V
A
A
A
+0.10
–0.05
0.78 MAX.
5
4
PA2782GR
0.12 M
Gate
Gate
Protection
Diode
EQUIVALENT CIRCUIT
1, 2, 3
4
5, 6, 7, 8 ; Drain
0.5 ±0.2
6.0 ±0.3
4.4
; Source
; Gate
Source
Drain
0.8
Schottky
Diode
0.10
2002

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upa2782gr Summary of contents

Page 1

N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION The PA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application. FEATURES Built a Schottky Barrier Diode Low on-state resistance R = ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Note Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) ...

Page 4

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (SCHOTTKY) 1000 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 4 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 Pulsed 4 4 100 T - Channel Temperature - °C ch SWITCHING ...

Page 6

The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

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