upa2782gr Renesas Electronics Corporation., upa2782gr Datasheet
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upa2782gr
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upa2782gr Summary of contents
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N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION The PA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application. FEATURES Built a Schottky Barrier Diode Low on-state resistance R = ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Note Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) ...
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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (SCHOTTKY) 1000 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 4 ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 Pulsed 4 4 100 T - Channel Temperature - °C ch SWITCHING ...
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The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...